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MRF8S19260HR6 mrf8s19260hsr6 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma and multicarrier base station applications with frequencies from 1930 to 1990 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =30volts,i dq = 1600 ma, p out = 74 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 1930 mhz 17.6 33.2 5.9 --36.0 1960 mhz 18.0 33.6 5.8 --35.7 1990 mhz 18.2 34.5 5.7 --34.6 ? capable of handling 10:1 vswr, @ 32 vdc, 1960 mhz, 390 watts cw (1) output power (3 db input overdrive from rated p out ) ? typical p out @ 1 db compression point ? 245 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (2,3) t j 225 c cw operation @ t c =25 c derate above 25 c cw 291 1.48 w w/ c table 2. thermal characteristics characteristic symbol value (3,4) unit thermal resistance, junction to case case temperature 85 c, 74 w cw, 30 vdc, i dq = 1600 ma, 1990 mhz case temperature 91 c, 260 w cw (1) ,30vdc,i dq = 1600 ma, 1990 mhz r jc 0.30 0.28 c/w 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s19260h rev. 1, 2/2012 freescale semiconductor technical data 1930--1990 mhz, 74 w avg., 30 v single w--cdma lateral n--channel rf power mosfets MRF8S19260HR6 mrf8s19260hsr6 case 375i--04 ni--1230--8 MRF8S19260HR6 case 375j--03 ni--1230s--8 mrf8s19260hsr6 (top view) rf outa /v dsa figure 1. pin connections rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a n.c. vbw b 18 45 27 36 n.c. ? freescale semiconductor, inc., 2010, 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 400 adc) v gs(th) 1.1 1.8 2.6 vdc gate quiescent voltage (v ds =30vdc,i d = 1600 madc) v gs(q) ? 3.1 ? vdc fixture gate quiescent voltage (1) (v dd =30vdc,i d = 1600 madc, measured in functional test) v gg(q) 4.5 5.2 6.0 vdc drain--source on--voltage (v gs =10vdc,i d =4.0adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (2) (in freescale test fixture, 50 ohm system) v dd =30vdc,i dq = 1600 ma, p out = 74 w avg., f = 1990 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 16.5 18.2 19.5 db drain efficiency d 32.0 34.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.2 5.7 ? db adjacent channel power ratio acpr ? --34.6 --31.5 dbc input return loss irl ? -- 1 3 ? db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =30vdc,i dq = 1600 ma, p out =74wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 1930 mhz 17.6 33.2 5.9 --36.0 -- 9 1960 mhz 18.0 33.6 5.8 --35.7 -- 1 1 1990 mhz 18.2 34.5 5.7 --34.6 -- 1 3 1. v gg =1.6xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output. (continued)
MRF8S19260HR6 mrf8s19260hsr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =30vdc,i dq = 1600 ma, 1930--1990 mhz bandwidth p out @ 1 db compression point, cw p1db ? 245 ? w imd symmetry @ 220 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 15 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 75 ? mhz gain flatness in 60 mhz bandwidth @ p out =74wavg. g f ? 0.6 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.014 ? db/ c output power variation over temperature (--30 cto+85 c ) (1) ? p1db ? 0.011 ? db/ c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6 figure 2. MRF8S19260HR6(hsr6) t est circuit component layout *c2, c3, c13, c14, c15, c16, and c24 are mounted vertically. mrf8s19260 rev. 0 cut out area r1 c19 r2 c4 c5 r3 r4 c2* c3* c1 r6 r5 c6 c7 r7 c20 c18 c17 c21 c23 c24* c15* c16* c13* c14* c22 c12 c10 c11 c8 c9 table 5. MRF8S19260HR6(hsr6) test circ uit component designations and values part description part number manufacturer c1 1.8 pf chip capacitor atc100b1r8bt500xt atc c2, c3, c5, c7, c8, c18 8.2 pf chip capacitors atc100b8r2ct500xt atc c4, c6 6.8 f, 50 v chip capacitors c4532x7r1h685kt tdk c9, c17 2.2 f, 50 v chip capacitors c3225x7r1h225kt tdk c10, c11, c12, c19, c20, c21 10 f chip capacitors grm55dr61h106ka88l murata c13, c14 0.3 pf chip capacitors atc100b0r3bt500xt atc c15, c16 9.1 pf chip capacitors atc100b9r1ct500xt atc c22, c23 330 f, 63 v electrolytic capacitors mcrh63v337m13x21--rh multicomp c24 1.2 pf chip capacitor atc800b1r2bt500xt atc r1, r2, r5, r6 10 k ? , 1/4 w chip resistors crcw120610k0jnea vishay r3, r7 4.75 ? , 1/4 w chip resistors crcw12064r75fnea vishay r4 2.37 ? , 1/4 w chip resistor crcw12062r37fnea vishay pcb 0.020 , r =3.5 ro4350b rogers
MRF8S19260HR6 mrf8s19260hsr6 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 1880 irl g ps acpr f, frequency (mhz) figure 3. output peak--to--average ratio compression (parc) broadband performance @ p out = 74 watts avg. -- 1 3 -- 5 -- 7 -- 9 -- 11 15 20 19.5 19 -- 3 8 36 35 34 33 --30.5 -- 3 2 --33.5 -- 3 5 d , drain efficiency (%) d g ps , power gain (db) 18.5 18 17.5 17 16.5 16 15.5 1900 1920 1940 1960 1980 2000 2020 2040 32 --36.5 -- 1 5 parc parc (db) -- 2 . 2 -- 1 -- 1 . 3 -- 1 . 6 -- 1 . 9 -- 2 . 5 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im5--l im7--l im7--u v dd =30vdc,p out = 220 w (pep), i dq = 1600 ma two--tone measurements (f1 + f2)/2 = center frequency of 1960 mhz figure 5. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 40 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 20 60 80 120 12 42 37 32 27 22 17 d , drain efficiency (%) -- 1 d b = 5 7 w 100 d acpr parc acpr (dbc) -- 5 5 -- 2 5 -- 3 0 -- 3 5 -- 4 5 -- 4 0 -- 5 0 18.7 g ps , power gain (db) g ps im3--u im3--l -- 2 d b = 8 0 w --3 db = 108 w v dd =30vdc,i dq = 1600 ma, f = 1960 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0. 01% probab ility on ccdf v dd =30vdc,p out =74w(avg.),i dq = 1600 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probab ility on ccdf im5--u 18.5 18.3 18.1 17.9 17.7 17.5
6 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 9 21 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 19 17 10 100 300 10 -- 6 0 acpr (dbc) 15 13 11 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 0 18 1460 f, frequency (mhz) v dd =30vdc p in =0dbm i dq = 1600 ma 12 9 6 1585 gain (db) 15 gain 1710 1835 1960 2085 2210 2335 2460 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) 3--15 1990 mhz 1930 mhz 1960 mhz 1930 mhz 1960 mhz 1990 mhz v dd =30vdc,i dq = 1600 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 8. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 9. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
MRF8S19260HR6 mrf8s19260hsr6 7 rf device data freescale semiconductor, inc. v dd =30vdc,i dq = 1600 ma , p out =74wavg. f mhz z source ? z load ? 1880 2.97 -- j0.46 0.95 -- j1.96 1900 3.16 -- j0.43 0.93 -- j1.86 1920 3.36 -- j0.42 0.92 -- j1.75 1940 3.58 -- j0.45 0.91 -- j1.65 1960 3.80 -- j0.53 0.91 -- j1.56 1980 4.02 -- j0.65 0.90 -- j1.46 2000 4.24 -- j0.83 0.90 -- j1.37 2020 4.43 -- j1.06 0.89 -- j1.29 2040 4.58 -- j1.35 0.89 -- j1.20 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6 alternative peak tune load pull characteristics 35 p in , input power (dbm) v dd =30vdc,i dq = 1600 ma, pulsed cw, 10 sec(on) 10% duty cycle 56 54 52 36 57 55 49 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 30 v 53 58 60 34 32 40 31 30 59 51 50 29 ideal actual 33 37 38 39 1990 mhz 1930 mhz 1960 mhz 1990 mhz 1960 mhz 1930 mhz f (mhz) p1db p3db watts dbm watts dbm 1930 316 55.0 380 55.8 1960 316 55.0 380 55.8 1990 324 55.1 389 55.9 test impedances per compression level f (mhz) z source ? z load ? 1930 p1db 6.70 -- j3.02 0.56 -- j1.05 1960 p1db 8.54 + j0.58 0.53 -- j1.03 1990 p1db 5.46 + j3.80 0.58 -- j1.01 figure 11. pulsed cw output power versus input power @ 30 v
MRF8S19260HR6 mrf8s19260hsr6 9 rf device data freescale semiconductor, inc. package dimensions
10 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6
MRF8S19260HR6 mrf8s19260hsr6 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6
MRF8S19260HR6 mrf8s19260hsr6 13 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2010 ? initial release of data sheet 1 feb. 2012 ? table 3, esd protection characte ristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2 ? replaced case outline 375i--03, issue b with 375i--04, issue c, p. 1, 9, 10. on sheet 2, changed dimension f in mm from 0.1--0.18 to 0.10--0.18, changed dimension u in mm from 0.89--1.02 to 0.89--1.14, changed dimension w3 in mm from 12.47--12.72 to 12.47--12.73. ? replaced case outline 375j--02, issue a with 375j--03, issue b, p. 1, 11, 12. on sheet 2, changed dimension a in mm from 32.13--32.38 to 32.13--32.39, changed dimension f in mm from 0.1--0.18 to 0.10--0.18, changed dimension u in mm from 8.89--11.43 to 0.89--1.14.
14 rf device data freescale semiconductor, inc. MRF8S19260HR6 mrf8s19260hsr6 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8s19260h rev. 1, 2/2012

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